Bulk GaN alpha-particle detector with large depletion region and improved energy resolution

• DOI: 10.1016/j.nima.2016.12.061
• Publication Date: 2016-12-30T03:32:19Z
• Authors: Qiang Xu; Padhraic Mulligan; Jinghui Wang; William Chuirazzi; Lei Cao
• Keywords: Alpha particle; Depletion region

An alpha-particle detector was fabricated using a freestanding n-type bulk GaN wafer with Au/Ni/GaN sandwich Schottky structure. Current–voltage measurements at room temperature revealed contact leakage current of 7.53±0.3 nA reverse bias 200 V. The had large depletion depth that can capture much the energy from 5.486 MeV alpha particles emitted 241Am source. resolution its spectrum improved to 2.2±0.2% under 550 This superior attributed shortening carrier transit time and deposition within depth, i.e., 27 µm −550 V, which all resulted in more complete charge collection. A model developed ATLAS simulation framework Silvaco Inc. employed study collection process. results were found agree closely experimental results. will be beneficial for research neutron scattering facilities, International Thermonuclear Experimental Reactor, Large Hadron Collider, among other institutions, where Si-based charged particle detectors could quickly degraded an intense radiation field.