Development of a neutron imaging sensor using INTPIX4-SOI pixelated silicon devices

• DOI: 10.1016/j.nima.2020.164400
• Publication Date: 2020-07-18T06:05:37Z
• Authors: Y. Kamiya; T. Miyoshi; H. Iwase; T. Inada; A. Mizushima; Y. Mita; K. Shimazoe; H. Tanaka; I. Kurachi; Y. Arai
• Keywords: Neutron Imaging; Neutron Detection

6 pages, 7 figures, 12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detector - HSTD12<br/>We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is measured to be around $1.5$\% for thermal neutrons. Upper bound of spatial resolution is evaluated to be $4.1 \pm 0.2 ~��$m in terms of a standard deviation of the line spread function.<br/>