Radiation effects on NDL prototype LGAD sensors after proton irradiation

• DOI: 10.1016/j.nima.2021.165559
• Publication Date: 2021-06-12T15:12:01Z
• Authors: Yuhang Tan; Tao Yang; Suyu Xiao; Kewei Wu; Lei Wang; Yaoqian Li; Zhenwei Liu; Zhijun Liang; Dejun Han; Xingan Zhang; Xin Shi
• Keywords: Physics - Instrumentation and Detectors; 0103 physical sciences; FOS: Physical sciences; Instrumentation and Detectors (physics.ins-det); 7. Clean energy; 01 natural sciences

We study the radiation effects of the Low Gain Avalanche Detector (LGAD) sensors developed by the Institute of High Energy Physics (IHEP) and the Novel Device Laboratory (NDL) of Beijing Normal University in China. These new sensors have been irradiated at the China Institute of Atomic Energy (CIAE) using 100 MeV proton beam with five different fluences from 7$\times10^{14}$ $n_{eq}/cm^2$ up to 4.5$\times10^{15}$ $n_{eq}/cm^2$. The result shows the effective doping concentration in the gain layer decreases with the increase of irradiation fluence, as expected by the acceptor removal mechanism. By comparing data and model gives the acceptor removal coefficient $c_{A}$ = $(6.07\pm0.70)\times10^{-16}~cm^2$, which indicates the NDL sensor has fairly good radiation resistance.