Radiation damage uniformity in a SiPM

• DOI: 10.1016/j.nima.2022.167042
• Publication Date: 2022-06-25T00:52:02Z
• Authors: O. Bychkova; E. Garutti; E. Popova; A. Stifutkin; S. Martens; P. Parygin; A. Kaminsky; J. Schwandt
• Keywords: Physics - Instrumentation and Detectors; 0103 physical sciences; FOS: Physical sciences; Instrumentation and Detectors (physics.ins-det); 01 natural sciences

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and breakdown voltage of SiPMs exposed to a reactor neutron fluence up to $Φ$ = 5e13 cm$^{-2}$. The cell has a pitch of 15 $μ$m. Results of the measurements and analysis of the IV-curves are presented. Impact of the self-heating effect was investigated. The radiation damage uniformity of 1 cell and 120 cells was checked up to $U_\mathit{ov}$ = 1.7 V. Fluence dependence of the breakdown voltage from the current measurements $U^{IV}_\mathit{bd}$ was extracted and compared to that of the breakdown voltage from the gain measurements $U^{G}_\mathit{bd}$.<br/>arXiv admin note: text overlap with arXiv:2111.00483<br/>