Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling

• DOI: 10.1016/j.nima.2022.167111
• Publication Date: 2022-07-07T03:07:51Z
• Authors: Tao Yang; Kewei Wu; Mei Zhao; Xuewei Jia; Yuhang Tan; Suyu Xiao; Kai Liu; Xiyuan Zhang; Congcong Wang; Mengzhao Li; Yunyun Fan; Shuqi Li; Chengjun Yu; Han Cui; Hao Zeng; Mingjie Zhai; Shuiting Xin; Maoqiang Jing; Gangping Yan; Qionghua Zhai; Mingzheng Ding; Gaobo Xu; Huaxiang Yin; Gregor Kramberger; Zhijun Liang; João Guimarães da...; Xin Shi
• Keywords: radiation damage; Single-photon avalanche diode; Leakage (economics)

We report precise TCAD simulations of IHEP-IME-v1 Low Gain Avalanche Diode (LGAD) calibrated by secondary ion mass spectroscopy (SIMS). Our setup allows us to evaluate the leakage current, capacitance, and breakdown voltage of LGAD, which agree with measurements' results before irradiation. And we propose an improved LGAD Radiation Damage Model (LRDM) which combines local acceptor removal with global deep energy levels. The LRDM is applied to the IHEP-IME-v1 LGAD and able to predict the leakage current well at -30 $^{\circ}$C after an irradiation fluence of $ Φ_{eq}=2.5 \times 10^{15} ~n_{eq}/cm^{2}$. The charge collection efficiency (CCE) is under development.