Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams
02 engineering and technology
0210 nano-technology
DOI:
10.1016/j.nimb.2015.08.038
Publication Date:
2015-08-31T08:33:42Z
AUTHORS (10)
ABSTRACT
Abstract An ion beam treatment of high purity single crystal silicon specimens was performed with different shots by the irradiation of intense pulsed ion beams (IPIB), which were generated by an accelerating voltage of 350 kV and with the current density of 130 A/cm 2 . As the result of irradiation, the formation of various microstructures caused by the irradiation effect, especially the thermal effect is confirmed by SEM and XRD analysis, and the corresponding processes are described and related explanations are given.
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