Recrystallization effects of swift heavy 209 Bi ions irradiation on electrical degradation in 4H-SiC Schottky barrier diode

• DOI: 10.1016/j.nimb.2017.02.004
• Publication Date: 2017-04-26T23:01:03Z
• Authors: Zhimei Yang; Yao Ma; Min Gong; Yun Li; Mingmin Huang; Bo Gao; Xin Zhao
• Keywords: Swift heavy ion; Recrystallization (geology); Reverse leakage current; Deep-level transient spectroscopy

Abstract In this paper, the phenomenon that the recrystallization effects of swift heavy 209 Bi ions irradiation can partially recovery damage with more than 1 × 10 10 ions/cm 2 is investigated by the degradation of the electrical characteristics of 4H-SiC Schottky barrier diode (SBD) with swift heavy ion irradiation. Deep level transient spectroscopy (DLTS) and Current-Voltage (I-V) measurements clearly indicated that E 0.62 defect induced by swift heavy ion irradiation, which was a recombination center, could result in the increase of reverse leakage current (I R ) at fluence less than 1 × 10 9 ions/cm 2 and the recovery of I R at fluence more than 1 × 10 10 ions/cm 2 in 4H-SiC SBD. The variation tendency of I R is consisted with the change of E 0.62 defect. Furthermore, it is reasonable explanation that the damage or defect formed at low fluence in SiC may be recovered by further swift heavy ion irradiation with high fluence, which is due to the melting with the ion tracks of the amorphous zones through a thermal spike and subsequent epitaxial recrystallization initiated from the neighboring crystalline regions.