Temperature dependence of dislocation-related photoluminescence (D1) of self-implanted silicon subjected to additional boron implantation

• DOI: 10.1016/j.nimb.2020.03.032
• Publication Date: 2020-04-07T21:33:58Z
• Authors: Alena Nikolskaya; Dmitry Korolev; Alexey Tereshchenko; Vladimir Pavlenkov; Sergey Nagornykh; Alexey Belov; Valery Vasiliev; Alexey Mikhaylov; David Tetelbaum
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract The goal of this work is the qualitative and quantitative interpretation of experimental data obtained for the effect of additional boron ion implantation on the temperature dependence of dislocation-related luminescence (D1 line) of self-implanted silicon. This goal is motivated by the need in development of effective light emitter for silicon-based optoelectronics. The model explaining the previously established improvement of the D1 line temperature dependence is suggested and supported by computer calculations based on a set of kinetic equations taking into account the radiative and nonradiative electron transitions between energy levels.