High gain in hybrid transistors with vanadium oxide/tris(8-hydroxyquinoline) aluminum emitter

• DOI: 10.1016/j.orgel.2006.11.005
• Publication Date: 2007-01-05T13:58:59Z
• Authors: Mingdong Yi; Shunyang Yu; Chengang Feng; Tong Zhang; Dongge Ma; M.S. Meruvia; Ivo A. Hümmelgen
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

We report the electrical characterization of hybrid permeable-base transistors with tris(8-hydroxyquinoline) aluminum as emitter layer. These transistors were constructed presenting an Al/n-Si/Au/Alq(3)/V2O5/Al structure. We investigate the influence of the V2O5 layer thickness and demonstrate that these devices present high common-base and common-emitter current gain, and can be operated at very low driving voltages, lower than 1 V, in both, common-base and common-emitter modes.