Study on the Resistance Characteristic of Pt Thin Film

• DOI: 10.1016/j.phpro.2012.03.634
• Publication Date: 2012-06-07T02:52:53Z
• Authors: Yujia Zhai; Changlong Cai; Jing Huang; Huan Liu; Shun Zhou; Weiguo Liu
• Keywords: Pt thin film; 02 engineering and technology; Physics and Astronomy(all); 0210 nano-technology; TCR; Vacuum annealing

AbstractIn this paper, Pt thin film was prepared as thermal resistor in bolometer. The measurements showed that the vacuum annealing proved to be an effect method to gain good resistance-temperature properties. The temperature coefficient of resistance (TCR) of resistance 1.28KΩ can be improved by vacuum annealing to achieve 1.737‰/K.What is obtained by experiment is that the values of TCR will be affected not only by annealing parameters, but also by the film thickness used, the films with 100nm thickness can achieve 2.3‰/K, while that with 17nm can only get 1.1‰/K.