Investigation of conduction and relaxation phenomena in BaZrxTi1−xO3 (x=0.05) by impedance spectroscopy

• DOI: 10.1016/j.physb.2014.06.035
• Publication Date: 2014-07-07T19:46:10Z
• Authors: Sandeep Mahajan; Divya Haridas; S.T. Ali; N.R. Munirathnam; K. Sreenivas; O.P. Thakur; Chandra Prakash
• Keywords: Arrhenius plot; Atmospheric temperature range; Orthorhombic crystal system

Abstract In present study we have prepared ferroelectric BaZr x Ti 1− x O 3 ( x =0.05) ceramic by conventional solid state reaction route and studied its electrical properties as a function of temperature and frequency. X-ray diffraction (XRD) analysis shows single-phase formation of the compound with orthorhombic crystal structure at room temperature. Impedance and electric modulus spectroscopy analysis in the frequency range of 40 Hz–1 MHz at high temperature (200–600 °C) suggests two relaxation processes with different time constant are involved which are attributed to bulk and grain boundary effects. Frequency dependent dielectric plot at different temperature shows normal variation with frequency while dielectric loss (tan δ ) peak was found to obey an Arrhenius law with activation energy of 1.02 eV. The frequency-dependent AC conductivity data were also analyzed in a wide temperature range.