Detailed analysis of possible current-transport mechanisms (CTMs) in Au/(P3DMTFT)/n-GaAs Schottky diodes (SDs) in a wide range of temperature

• DOI: 10.1016/j.physb.2025.416949
• Publication Date: 2025-01-21T00:05:53Z
• Authors: Yılmaz Kansız; Ömer Sevgili; Ahmet Faruk Özdemir; Durmuş Ali Aldemir; Maryam Abdolahpou...; Şemsettin Altındal
• Keywords: Atmospheric temperature range

In this study, Au/Poly[3-(2,5-dimethyl-4-thienyl)phenylthiophene](P3DMTFT)/n-GaAs Schottky diodes were produced, and their CTMs were evaluated between 80 and 320 K using current/voltage (I-V) characteristics. Using the standard thermionic emission (TE) theory/model, basic electrical parameters were extracted from the forward bias voltages at each temperature. Fluctuations in the barrier height (BH, ΦB0), and ideality factor (n) were attributed to BH inhomogeneity, which was assumed to follow a Gaussian distribution (GD) across the metal-semiconductor contact. The Richardson-Arrhenius curve deviated from linearity at lower temperatures. The ΦB0 and n against q/2 kT graphs exhibited two distinct linear regions with differing slopes. These are two key indicators that there is a double Gaussian distribution between metal and semiconductor. To improve the analysis, a modified Richardson plot was created utilizing the standard deviation (σs0) values from the slopes of the two linear sections of ΦB0-q/2 kT. The energy-dependent profiles of the surface states (Nss) were also derived using the forward-bias I-V data.