One phonon resonant Raman scattering in free-standing quantum wires

• DOI: 10.1016/j.physleta.2006.12.070
• Publication Date: 2007-01-10T10:06:46Z
• Authors: Xiang-Fu Zhao; Cui-Hong Liu
• Keywords: Phonon scattering; Quantum wire

Abstract The scattering intensity (SI) of a free-standing cylindrical semiconductor quantum wire for an electron resonant Raman scattering (ERRS) process associated with bulk longitudinal optical (LO) phonon modes and surface optical (SO) phonon modes is calculated separately for T = 0 K . The Frohlich interaction is considered to illustrate the theory for GaAs and CdS systems. Electron states are confined within a free-standing quantum wire (FSW). Single parabolic conduction and valence bands are assumed. The selection rules are studied. Numerical results and a discussion are also presented for various radii of the cylindrical.