Warping of silicon wafers subjected to back-grinding process
Image warping
Wafer backgrinding
Wafer testing
DOI:
10.1016/j.precisioneng.2014.10.009
Publication Date:
2014-10-24T22:18:50Z
AUTHORS (5)
ABSTRACT
Abstract This study investigates warping of silicon wafers in ultra-precision grinding-based back-thinning process. By analyzing the interactions between the wafer and the vacuum chuck, together with the machining stress distributions in damage layer of ground wafer, the study establishes a mathematical model to describe wafer warping during the thinning process using the elasticity theory. The model correlates wafer warping with machining stresses, wafer final thickness, damage layer thickness, and the mechanical properties of the monocrystalline silicon. The maximum warp and the warp profile are measured on the wafers thinned to various thicknesses under different grinding conditions, and are used to verify the modeling results.
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