Fast neutron irradiation effects on Si- and GaN-based avalanche photodiodes

• DOI: 10.1016/j.rinp.2022.105574
• Publication Date: 2022-05-05T06:47:33Z
• Authors: Xiang Fu; Biao Wei; Jianbin Kang; Wangping Wang; Ge Tang; Qian Li; Feiliang Chen; Mo Li
• Keywords: APDS

We report the behaviour of dark current and gain characteristics Si- GaN-based avalanche photodiodes (APDs) irradiated by fast neutrons. For Si-based APDs, increases with increase neutron fluence, indicating that property has been seriously affected. The values APD slightly after irradiation a low fluence 1.0 × 1012 cm−2, while device exhibits degradation as to 1013 cm−2 or even above at high reverse bias voltage, unlike previous studies where only was observed. steep when approaching breakdown voltage indicate is almost unaffected for APDs. Furthermore, we infer optical absorption between acceptor state conduction band in p-type layer plays an important role influencing change voltage. findings not enrich understanding effect on but also experimentally prove APDs hold better radiation resistance than devices.