Device modelling and numerical analysis of high-efficiency double absorbers solar cells with diverse transport layer materials

• DOI: 10.1016/j.rio.2024.100647
• Publication Date: 2024-02-24T17:11:16Z
• Authors: Sheikh Hasib Cher...; Mohammad Jahangir...
• Keywords: Double absorber solar cell; Modeling; SCAPS-1D; QC350-467; 02 engineering and technology; Optics. Light; 0210 nano-technology; PCE; Simulation

Recently, a lot of focus has been placed on cesium lead iodide (CsPbI3) since it is considered potentially useful inorganic halide perovskite with improved stability. Moreover, another potential absorber material the mixed chalcogenide CZTSSe, which abundant Earth, cheap, environmentally acceptable, and excellent photovoltaic performance. This research numerically simulated novel double solar cell structure employing CsPbI3 CZTSSe absorbers in active layer SCAPS-1D. The current study analyses effects various electron hole transport materials, back contact material's work functions, working temperatures, variations defect concentration, thickness performance devices. After researching variety distinct arrangements cells, was realized that FTO/STO/CsPbI3/CZTSSe/NiO/W configuration exhibited best overall an open circuit voltage (Voc) at 1.0207 V, short density (Jsc) 41.815426 mA/cm2, Fill Factor (FF) 87.50 %, Power Conversion Efficiency (PCE) 37.35 %. modeling device showed around 1.4 µm for optimal. simulation shows when temperature concentration increase, efficiency reduces uniformly, stable 300 K temperature. In conclusion, if function greater than 5.20 eV, then suitable use as anode.