Inkjet-printed boron-doped poly-Si/SiOx passivating contacts

• DOI: 10.1016/j.solmat.2024.112928
• Publication Date: 2024-05-14T16:56:40Z
• Authors: Jiali Wang; Sieu Pheng Phang; Thien N. Truong; Zhuofeng Li; Hieu T. Nguyen; Daniel Macdonald; Josua Stuckelberger

In this study, we explore the utilization of inkjet printing technology with liquid ink to fabricate boron-doped polycrystalline silicon (poly-Si)/SiOx passivating contacts. The impacts substrate morphology, baseplate temperature, and surface oxide on performance were investigated achieve distinct printed patterns. Moreover, a pre-oxidation process at 750 °C for 30 min was conducted as strategy prevent dopant spreading from pattern via gas phase during high-temperature annealing. Thereafter, influences annealing temperature formed poly-Si contact quality studied. By applying optimized conditions intrinsic poly-Si(i-poly-Si)/SiOx/p-type crystalline Si (c-Si) substrates, promising passivation achieved an implied open-circuit voltage (iVoc) 718 mV low resistivity (ρc) 6.1 mΩ cm2 after 950 followed by hydrogenation treatment. Optical images demonstrate that single-droplet lines width 69 μm could be realized mechanically polished drop spacing 40 μm, while line expands rough surfaces or when reduced spacing. Furthermore, high-resolution micro-photoluminescence maps clearly illustrate localization regions planar substrates We also formation localized inkjet-printed phosphorus- contacts simultaneously within single step °C. These findings underscore potential technique fabricating poly-Si/SiOx in high-efficiency solar cells.