Directional effects on bound quantum states for trench oxide quantum wires on (100)-silicon

• DOI: 10.1016/j.sse.2003.08.006
• Publication Date: 2003-10-16T15:12:22Z
• Authors: A. Trellakis; U. Ravaioli
• Keywords: 0103 physical sciences; 01 natural sciences

Abstract We examine the influence of channel axis orientation on bound electron states for trench oxide quantum wires built on (1 0 0)-silicon surfaces. We describe these structures by solving the coupled system of Schrodinger’s and Poisson’s equation selfconsistently using a realistic mass tensor for all six conductions band valleys. We find that for the structure examined aligning the channel axis with a (1 0 0)-direction has only a small influence on the spectrum of bound electron states and practically none on total channel occupation.