Giant magnetoresistance due to electron-hole pair mechanism in poly(N-vinylcarbazole)

• DOI: 10.1016/j.synthmet.2009.10.003
• Publication Date: 2009-11-06T09:12:36Z
• Authors: Tadaaki Ikoma; Toshinari Ogiwara; Yutaka Takahashi; Kimio Akiyama; Shozo Tero-Kubota; Yuka Takahashi; Tomohiro Suzuki; Yusuke Wakikawa
• Keywords: Exchange interaction

Abstract An amorphous molecular semiconductor, poly( N -vinylcarbazole) (PVCz), exhibits negative giant magnetoresistance (MR) under ambient conditions. The application of a weak magnetic field of 10 mT to PVCz films doped with lumichrome, in which light excitation immediately creates triplet electron-hole (e-h) pairs that are precursors of photocarriers, causes a steep decrease in resistivity by more than 20% at ambient temperature. Further, the resistivity of the doped film gradually reduces by approximately one-half under a field of 1 T, equivalent to an MR ratio of −55%. In addition, anomalous spikes are also detected at 0.07, 0.30, and 9.0 T, indicative of an exponential dependence with a decay distance of 0.1 nm in the exchange interaction of the e-h pair. A quantum mechanical calculation based on the density operator formalism clarifies that the observed MR effect can be comprehensively understood by the spin-selective charge dynamics and the coherent and incoherent spin dynamics of the e-h pair in a quasi-one-dimensional lattice for photocarrier generation. Model calculations also indicate the importance of the spin-lattice relaxation for the giant MR effect in organic molecular semiconductors.