Evolution of Si (and SiC) nanocrystal precipitation in SiC matrix

• DOI: 10.1016/j.tsf.2007.06.150
• Publication Date: 2007-06-27T07:12:52Z
• Authors: Dengyuan Song; Eun-Chel Cho; Young-Hyun Cho; Gavin Conibeer; Yidan Huang; Shujuan Huang; Martin A. Green
• Keywords: 0103 physical sciences; 01 natural sciences

Abstract Si1−xCx films with varying ratio of carbon to silicon (C/Si) were fabricated by magnetron co-sputtering from a combined C and Si target. The composition in films was changed by adjusting the ratio of sputtered target's area between C and Si. Analysis of X-ray photoelectron spectroscopy for as-deposited films shows that C/Si atomic ratios of our films have ranges of 0.33–1.02. Thermal annealing of as-deposited films was carried out at various temperatures from 800 to 1100 °C in a conventional furnace. Fourier transform infrared spectra show a shift of Si–C stretching peak towards higher wavenumbers from ∼ 737 cm− 1 to ∼ 800 cm− 1 with increasing annealing temperature. From the results of Raman spectroscopy, X-ray diffraction and transmission electron microscopy, it was found that the dominant type of nanocrystals changes from Si to SiC in the films annealed at 1100 °C when the C/Si atomic ratio increases from 0.33 to 1.02.