Distributions of barrier heights, difference of effective contact potential, and local values of flat-band voltage in Al–SiO2–Si and poly–Si–SiO2–Si structures

• DOI: 10.1016/j.tsf.2007.11.005
• Publication Date: 2007-11-13T12:22:34Z
• Authors: H.M. Przewlocki; A. Kudla; K. Piskorski; D. Brzezinska
• Keywords: Volta potential

Abstract It was previously shown that the effective contact potential difference ( φ MS ) in Al–SiO 2 –Si metal-oxide-semiconductor structures has a “dome-like” shape of distribution over the Al-gate area. In this paper we show that this shape is due to the distribution of the barrier height at the Al–SiO 2 interface and that the characteristic shape of φ MS ( x , y ) distribution is reflected in a similar shape of the flat-band voltage V FB ( x , y )distribution over the gate area. As opposed to the Al–SiO 2 –Si system, we find that in poly–Si–SiO 2 –Si structures both the φ MS ( x , y ) and the V FB ( x , y ) distributions are practically uniform.