Effect of oxygen flow rate on ITO thin films deposited by facing targets sputtering

• DOI: 10.1016/j.tsf.2010.03.041
• Publication Date: 2010-03-25T08:37:52Z
• Authors: Youn J. Kim; Su B. Jin; Sung I. Kim; Yoon S. Choi; In S. Choi; Jeon G. Han
• Keywords: 0103 physical sciences; 01 natural sciences

Abstract Tin-doped indium oxide (ITO) thin films were deposited on glass substrates at various oxygen flow rates using a planar magnetron sputtering system with facing targets. In this system, the strong internal magnets inside the target holders confine the plasma between the targets. High resolution transmission electron microscopy revealed a combination of amorphous and crystalline phases on the glass substrate. X-ray photoelectron spectroscopy suggested that the decrease in carrier concentration and increase in mobility were caused by a decrease in the concentration of Sn4+ states. The electrical and optical properties of the ITO films were examined by Hall measurements and UV–visible spectroscopy, which showed a film resistivity and transmittance of 4.26 × l0−4 Ω cm, and > 80% in the visible region, respectively.