Fabrication of TiO2 thin film memristor device using electrohydrodynamic inkjet printing

• DOI: 10.1016/j.tsf.2012.03.003
• Publication Date: 2012-03-08T23:22:32Z
• Authors: Navaneethan Durai...; Nauman Malik Muha...; Hyung-Chan Kim; Jeong-Dai Jo; Kyung-Hyun Choi
• Keywords: Electrohydrodynamics; Titanium Dioxide

Abstract In this paper, we are reporting the fabrication of memristor device (Ag/TiO 2 /Cu) using electrohydrodynamic inkjet printing technology. The titanium oxide (TiO 2 ) active layer was deposited using electrohydrodynamic atomization technique. The metal electrodes were patterned by using electrohydrodynamic printing technique. The crystalline nature, surface morphology and optical properties of as deposited TiO 2 films were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and UV-visible spectroscopic analysis respectively. XRD and SEM studies revealed that the presence of anatase TiO 2 with uniform deposition. The optical transmittance of the deposited TiO 2 films was observed to be 87% in the visible region. The fabricated memristor device (Ag/TiO 2 /Cu) exhibits bipolar resistive switching behavior within the low operating voltage (± 0.7 V). Our results ensure that the printed technology provides breakthrough solution in the electronic memory device fabrication.