Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature

• DOI: 10.1016/j.tsf.2012.07.040
• Publication Date: 2012-07-20T08:30:45Z
• Authors: Q. Qi; W.Z. Zhang; L.Q. Shi; W.Y. Zhang; W. Zhang; B. Zhang
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract Single-crystal films of TiC (111) have been synthesized at room temperature on Al 2 O 3 (0001) substrates by radio frequency magnetron sputtering using a compound Ti–C target. The substrate temperature and bias were varied to explore the influence of deposition parameters on the crystal structure. Both Al 2 O 3 (0001) and Si (100) substrates were used for epitaxial growth of TiC films. A series of characterizations of TiC films were carried out, including Rutherford backscattering spectroscopy, X-ray diffraction, Raman and X-ray photoelectron spectroscopy. Single-crystal films of TiC (111) on the Al 2 O 3 (0001) were demonstrated.