Investigation of temperature dependent optical modes in Ge x As 35−x Se 65 thin films: Structure specific Raman, FIR and optical absorption spectroscopy

• DOI: 10.1016/j.tsf.2016.11.037
• Publication Date: 2016-11-27T00:32:04Z
• Authors: Pritam Khan; Arinjoy Bhattacharya; Abin Joshy; Vasant Sathe; Uday Deshpande; K.V. Adarsh
• Keywords: Absorption edge

In this article, we present a comprehensive study of temperature and composition dependent Raman spectroscopy of GexAs35-xSe65 thin films to understand different structural units responsible for optical properties. Strikingly, our experimental results uncover the ratio of GeSe4/2 tetrahedral and AsSe3/2 pyramidal units in GexAs35-xSe65 thin films and their linear scaling relationship with temperature and x. An important notable outcome of our study is the formation of Se8 rings at lower temperatures. Our experimental results further provide interesting optical features, thermally and compositionally tunable optical absorption spectra. Detailed structure specific FIR data at room temperature also present direct information on the structural units in consistent with Raman data. We foresee that our studies are useful in determining the lightinduced response of these films and also for their potential applications in optics and optoelectronics.<br/>18 pages, 7 figures<br/>