The impact of thermal annealing on the temperature dependent resistance behavior of Pt thin films sputtered on Si and Al2O3 substrates

• DOI: 10.1016/j.tsf.2019.06.036
• Publication Date: 2019-06-22T14:18:01Z
• Authors: Xingkai Lin; Congchun Zhang; Shenyong Yang; Wei Guo; Yu Zhang; Zhuoqing Yang; Guifu Ding
• Keywords: Temperature coefficient

Abstract Influence of annealing temperature on the microstructural and electrical properties of sputtered Pt thin films was investigated. Pt thin films were sputtered on oxidized Si substrates and Al2O3 ceramics respectively and then annealed at different temperature for different time. The microstructures and electrical properties of Pt thin-film resistances were investigated. Pt thin films on oxidized Si substrates and Al2O3 ceramics showed different temperature dependent resistance behaviors and crystal growth preference. The temperature coefficient of resistance (TCR) of Al2O3-based resistances was more stable and less affected than the SiO2-based ones, and TCR of SiO2-based ones exhibited continuous increase after two more hours annealing. In addition, the factors that affected TCR were discussed.