Detailed loss analysis of 24.8% large-area screen-printed n-type solar cell with polysilicon passivating contact

• DOI: 10.1016/j.xcrp.2021.100603
• Publication Date: 2021-10-12T23:08:49Z
• Authors: Peiting Zheng; Jie Yang; Zhao Wang; Lu Wu; Haijie Sun; Shi Chen; Yao Guo; Han Xia; Sieu Pheng Phang; Er-Chien Wang; Josua Stuckelberger; Hang Cheong Sio; Xinyu Zhang; Daniel Macdonald; Hao Jin
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

Summary Doped polysilicon-based passivating contacts are expected to be a key technology to enable higher efficiency in mass-produced silicon solar cells in coming years, with the world market share expected to increase almost 9-fold to 35% in 2031. The excellent carrier selectivity of passivated contacts enables low-resistance extraction of carriers without compromising surface passivation and has been instrumental in recent advances in high-efficiency solar cells. Here, we report on the application of phosphorus-doped polysilicon passivating contacts on large-area screen-printed n-type silicon solar cells, using industrially viable fabrication processes. A champion cell efficiency of 24.79% is reported, as independently measured by ISFH-CalTeC on a 163.75 × 163.75-mm solar cell. Detailed characterization and simulation are applied to investigate the primary losses and pathways for further improvement of the state-of-the-art industrial high-efficiency solar cell, revealing that the front-side boron-diffused region accounts for around 63% of the electrical losses.