NiOx/MoOx bilayer as an efficient hole-selective contact in crystalline silicon solar cells

• DOI: 10.1016/j.xcrp.2021.100684
• Publication Date: 2021-12-07T16:15:12Z
• Authors: Le Li; Guanlin Du; Yinyue Lin; Xi Zhou; Zeyu Gu; Linfeng Lu; Wenzhu Liu; Jin Huang; Jilei Wang; Liyou Yang; Shan-Ting Zhang; Dongdong Li
• Keywords: Passivation

Designing effective carrier-selective contact is a prerequisite for high-efficiency crystalline silicon (c-Si) solar cells. Compared to doped thin films, wide-band-gap transition metal oxides (TMOs) feature low parasitic absorption, but their carrier selectivity and passivation being poor leads mediocre cell efficiency. Herein, we introduce NiOx/MoOx bilayer as an efficient hole-selective in c-Si A power conversion efficiency (PCE) of 21.31% achieved using bilayer, outperforming cells with single layer NiOx or MoOx. Upon depositing on MoOx, interfacial reactions modify the stoichiometry defect chemistry both oxides, leading band alignment beneficial hole selectivity. By inserting SiOx tunneling surface further suppress recombination, achieve PCE 21.60% (fill factor 83.34%). Our work highlights promising approach improve performance dopant-free by employing cost-effective TMOs contact.