Low-Temperature Atomic Layer Deposition of α-Al2O3 Thin Films

• DOI: 10.1021/acs.cgd.1c00471
• Publication Date: 2021-06-14T13:12:55Z
• Authors: Lauri Aarik; Hugo Mändar; Peeter Ritslaid; Aivar Tarre; Jekaterina Kozlova; Jaan Aarik
• Keywords: Corundum; Deposition; Crystal (programming language)

The atomic layer deposition of Al2O3 films on Si(100) and α-Cr2O3 was studied. were grown via AlCl3-H2O, AlCl3-O3, Al(CH3)3-H2O, Al(CH3)3-O3 processes at 300–750 °C. deposited from AlCl3 H2O temperatures ≥ 400 °C contained the corundum phase alumina (α-Al2O3). densities refractive indices α-Al2O3 close to corresponding values single-crystal exceeded markedly those amorphous Al2O3. also obtained in 450 O3 Al(CH3)3 H2O. However, crystallinity, densities, latter lower than Etching hot (110 °C) 80% H2SO4 used characterize chemical resistance aggressive environments. etching rate 450–750 more 1000 times that predominantly Al2O3, 750 γ-Al2O3, δ-Al2O3, and/or θ-Al2O3.