Realization of Controllable Growth of N-Polarity GaN Films on SiC Substrates by Modulating the Nucleation of the AlN Buffer Layer

Realization (probability) Buffer (optical fiber) Polarity (international relations) Wide-bandgap semiconductor
DOI: 10.1021/acs.cgd.4c01503 Publication Date: 2025-03-05T08:30:32Z