Realization of Controllable Growth of N-Polarity GaN Films on SiC Substrates by Modulating the Nucleation of the AlN Buffer Layer
Realization (probability)
Buffer (optical fiber)
Polarity (international relations)
Wide-bandgap semiconductor
DOI:
10.1021/acs.cgd.4c01503
Publication Date:
2025-03-05T08:30:32Z
AUTHORS (13)
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