Evidence for Pseudocapacitance and Faradaic Charge Transfer in High-Mobility Thin-Film Transistors with Solution-Processed Oxide Dielectrics

• DOI: 10.1021/acs.jpclett.0c00583
• Publication Date: 2020-03-19T19:19:41Z
• Authors: Xiaoci Liang; Ling Liu; Guangshuo Cai; Peng Yang; Yanli Pei; Chuan Liu
• Keywords: Pseudocapacitance

In developing low-power electronics, low-voltage transistors have been intensively investigated. One of the most important findings is that some high-k oxide gate dielectrics can lead to remarkable enhancement apparent mobility in thin-film (TFTs), which not clearly understood. Here, we investigate InOx TFTs with solution-processed AlOx dielectrics. At very low frequencies (<1 Hz), films feature strong voltage-dependent capacitance. Also, cyclic voltammograms show clear features surface-controlled Faradaic charge transfer. The two independent experiments both point formation pseudocapacitance, similar mechanism behind supercapacitors. A physical model including transfer established describe ion distribution. probably related residual hydrogens, as revealed by secondary-ion mass spectroscopy. results provide direct evidence pseudocapacitance high mobilities and advance understanding mechanisms, measurements, applications such for electronics.