Microwave AC Resonance Induced Phase Change in Sb2Te3 Nanowires

• DOI: 10.1021/acs.nanolett.0c03421
• Publication Date: 2020-11-18T21:26:12Z
• Authors: Pok Lam Tse; Fugu Tian; Laura Mugica-Sanchez; Oliver Rüger; Andreas Undisz; George Möthrath; Carsten Ronning; Susumu Takahashi; Jia Grace Lu
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity, and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at ∼3 GHz in single Sb2Te3 nanowires. The resistance change by a total of 6-7 orders of magnitude is evidenced by a transition from the crystalline metallic to the amorphous semiconducting phase, which is cross-examined by temperature dependent transport measurement and high-resolution electron microscopy analysis. This discovery could potentially tailor multistate information bit encoding and electrical addressability along a single nanowire, rendering technology advancement for neuro-inspired computing devices.