Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2

• DOI: 10.1021/acs.nanolett.1c01108
• Publication Date: 2021-06-21T19:42:31Z
• Authors: Cheng Tan; Wen-Qiang Xie; Guolin Zheng; Nuriyah Aloufi; Sultan Albarakati; Meri Algarni; Junbo Li; James Partridge; Dimitrie Culcer; Xiaolin Wang; Jia Bao Yi; Mingliang Tian; Yimin Xiong; Yu-Jun Zhao; Lan Wang
• Keywords: 0301 basic medicine; magnetic phase transition; EDLT; Chemical Sciences not elsewhere classified; Immunology; Biophysics; F 5GT; FOS: Physical sciences; F 5GT nanosheets; electron doping concentration; Biochemistry; Microbiology; 03 medical and health sciences; antiferromagnetic vdW devices; carrier; FM; van der Waals; phase; F 5GT Importantly; van der Waals Magnet Fe 5 GeTe 2; Cancer; density; Condensed Matter - Materials Science; 0303 health sciences; van der Waals ferromagnetism; Materials Science (cond-mat.mtrl-sci); Cell Biology; ferromagnet Fe 5 GeTe 2; material; solid protonic gating; Fe5GeTe2; AFM; Physical Sciences not elsewhere classified; voltage-induced charge doping; Biotechnology; nanosheet F 5GT

Magnetic van der Waals (vdW) materials, including ferromagnets (FM) and antiferromagnets (AFM), have given access to the investigation of magnetism in two-dimensional (2D) limit attracted broad interests recently. However, most them are semiconducting or insulating vdW itinerant magnets, especially AFM, very rare. Here, we studied anomalous Hall effect a magnet Fe$_5$GeTe$_2$ (F5GT) with various thicknesses down 6.8 nm (two unit cells). Despite robust ferromagnetic ground state thin-layer F5GT, however, show that electron doping implemented by protonic gate can eventually induce magnetic phase transition from FM AFM. Realization an antiferromagnetic F5GT highlights its promising applications high-temperature devices heterostructures.