p-n Junction Based Direct-Current Triboelectric Nanogenerator by Conjunction of Tribovoltaic Effect and Photovoltaic Effect

• DOI: 10.1021/acs.nanolett.1c03922
• Publication Date: 2021-11-29T22:51:43Z
• Authors: Lele Ren; Aifang Yu; Wei Wang; Di Guo; Mengmeng Jia; Pengwen Guo; Yufei Zhang; Zhong Lin Wang; Junyi Zhai
• Keywords: Nanogenerator; Mechanical energy; Saturation current; Rectifier (neural networks)

Triboelectric nanogenerators (TENGs) have attracted much interest in recent years, due to its effectiveness and low cost for converting high-entropy mechanical energy into electric power. The traditional TENGs generate an alternating current, which requires a rectifier provide direct-current (DC) power supply. Herein, dynamic p-n junction based triboelectric nanogenerator (DTENG) is demonstrated. When p-Si wafer sliding on n-GaN wafer, carriers are generated at the interface DC current produced along direction of built-in field, called tribovoltatic effect. Simultaneously, UV light illuminated enhance output. results indicate that increases 13 times voltage 4 under (365 nm, 28 mW/cm2) irradiation. This work demonstrates coupling between tribovoltaic effect photovoltaic DTENG semiconductors, promoting further development harvesting photon energy.