Two-Terminal MoS2 Memristor and the Homogeneous Integration with a MoS2 Transistor for Neural Networks

• DOI: 10.1021/acs.nanolett.2c05007
• Publication Date: 2023-06-20T12:56:50Z
• Authors: Shuai Fu; Ji-Hoon Park; Hongyan Gao; Tianyi Zhang; Xiang Ji; Tianda Fu; Lu Sun; Jing Kong; Jun Yao
• Keywords: Memristor

Memristors are promising candidates for constructing neural networks. However, their dissimilar working mechanism to that of the addressing transistors can result in a scaling mismatch, which may hinder efficient integration. Here, we demonstrate two-terminal MoS2 memristors work with charge-based similar transistors, enables homogeneous integration realize one-transistor-one-memristor addressable cells assembling programmable The homogenously integrated implemented 2 × network array enabled addressability and programmability. potential scalable is evaluated simulated using obtained realistic device parameters, achieves over 91% pattern recognition accuracy. This study also reveals generic strategy be applied other semiconducting devices engineering memristive systems.