Topology-Engineered Orbital Hall Effect in Two-Dimensional Ferromagnets

• DOI: 10.1021/acs.nanolett.3c05129
• Publication Date: 2024-04-15T15:26:00Z
• Authors: Zhiqi Chen; Runhan Li; Yingxi Bai; Ning Mao; Mahmoud Zeer; Dongwook Go; Ying Dai; Baibiao Huang; Yuriy Mokrousov; Chengwang Niu
• Keywords: Condensed Matter - Materials Science; info:eu-repo/classification/ddc/660; 660; Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences

Published by ACS Publ., Washington, DC<br/>Recent advances in the manipulation of the orbital angular momentum (OAM) within the paradigm of orbitronics presents a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrate that topological phase transitions present an efficient and straightforward way to engineer the OHE, where the OAM distribution can be controlled by the nature of the band inversion. Using first-principles calculations, we identify Janus RuBrCl and three septuple layers of MnBi2Te4 as experimentally feasible examples of the proposed mechanism of OHE engineering by topology. With our work, we open up new possibilities for innovative applications in topological spintronics and orbitronics.<br/>Nano letters 24(16), 4826–4833 (2024). doi:10.1021/acs.nanolett.3c05129<br/>