Layer-Number-Dependent Magnetism in the Co-Doped van der Waals Ferromagnet Fe3GaTe2

• DOI: 10.1021/acs.nanolett.3c05148
• Publication Date: 2024-03-27T18:22:54Z
• Authors: Mingjie Wang; Kejia Zhu; Bin Lei; Yazhou Deng; Tao Hu; Dongsheng Song; Haifeng Du; Mingliang Tian; Ziji Xiang; Tao Wu; Xianhui Chen
• Keywords: Magnetism; Magnetic semiconductor

Recently, van der Waals (vdW) antiferromagnets have been proposed to be crucial for spintronics due their favorable properties compared ferromagnets, including robustness against magnetic perturbation and high frequencies of spin dynamics. High-performance energy-efficient functionalities often depend on the current-driven manipulation detection states, highlighting significance two-dimensional metallic antiferromagnets, which not much explored lack suitable materials. Here, we report a new vdW antiferromagnet obtained from ferromagnet Fe3GaTe2 by cobalt (Co) doping. Through layer-number-dependent Hall resistance magnetoresistance measurements, an evident odd–even layer-number effect has observed in its few-layered flakes, suggesting that it could host A-type antiferromagnetic structure. This peculiar magnetism Co-doped helps unravel complex structures such doped magnets, our finding will enrich material candidates spintronic applications.