Login

Artificial Synapse Based on a δ-FAPbI3/Atomic-Layer-Deposited SnO2 Bilayer Memristor

Memristor Formamidinium Triiodide Neuromorphic engineering
DOI: 10.1021/acs.nanolett.4c00253 Publication Date: 2024-04-15T12:48:54Z
Abstract Supplemental Material References Cited by
AUTHORS (7)
Sang-Uk Lee
So-Yeon Kim
Joo-Hong Lee
Ji Hyun Baek
Jin-Wook Lee
Ho Won Jang
Nam-Gyu Park
ABSTRACT
Halide perovskite-based resistive switching memory (memristor) has potential in an artificial synapse. However, abrupt switch behavior observed for a formamidinium lead triiodide (FAPbI
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES (48)
CITATIONS (5)
EXTERNAL LINKS
OPENALEX - Publications  CROSSREF - Publications  OPENAIRE - Products 
PlumX Metrics
RECOMMENDATIONS
FAIR ASSESSMENT
Coming soon ....
JUPYTER LAB
Coming soon ....