SiX2 (X = S, Se) Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications

• DOI: 10.1021/acs.nanolett.4c01666
• Publication Date: 2024-05-09T19:40:18Z
• Authors: Saichao Yan; Kang Wang; Zhixin Guo; Yu-Ning Wu; Shiyou Chen
• Keywords: Nanoelectronics

The gate-all-around (GAA) field-effect transistor (FET) holds great potential to support next-generation integrated circuits. Nanowires such as carbon nanotubes (CNTs) are one important category of channel materials in GAA FETs. Based on first-principles investigations, we propose that SiX2 (X = S, Se) nanowires promising can significantly elevate the performance sub-5 nm nanowire FETs exhibit excellent ballistic transport properties meet requirements 2013 International Technology Roadmap for Semiconductors (ITRS). Compared CNTs, they also advantageous or at least comparable terms gate controllability, device dimensions, etc. Importantly, SiSe2 show superb controllability due ultralow minimum subthreshold swing (SSmin) breaks "Boltzmann's tyranny". Moreover, energy-delay product (EDP) is lower than CNT These features make ideal material FET devices.