Subattojoule Electrical Switching in a Two-Dimensional TaSe2 Oxide Device with High Endurance

• DOI: 10.1021/acs.nanolett.4c05242
• Publication Date: 2025-01-30T13:19:31Z
• Authors: Jiahao Shen; Feiyu Tang; Changying Xiong; Xianliang Mai; Huan Wang; Xiao Luo; Qundao Xu; Meng Xu; Yi Li; Kan-Hao Xue; Ming Xu; Zhongrui Wang; Xiangshui Miao
• Keywords: Complex oxide

Recent developments in artificial intelligence and the internet-of-things have created great demand for low-power microelectronic devices. Two-dimensional (2D) electrical switching materials are extensively used neuromorphic computing technology, yet their high leakage current low endurance impede further application. This study presents a vertical crossbar-structured conductive-bridge threshold device based on 2D TaSe2 oxide. Utilizing natural oxidation under air to generate TaSeO functional layer, this demonstrates stable behavior with operating voltage (<0.8 V) steep turn-on slope (<9.4 mV decade–1). Notably, exceptionally subattojoule energy consumption (0.142 aJ) remarkable durability (>108). breakthrough tackles issues prevalent devices holds promising implications computing. The fundamental process, as supported by transmission electron microscopy, hinges role of Ag2Se nanocrystalline islands promoting growth conductive filaments, enhancing performance endurance.