Strain-Induced Spatial and Spectral Isolation of Quantum Emitters in Mono- and Bilayer WSe2

• DOI: 10.1021/acs.nanolett.5b03312
• Publication Date: 2015-10-19T18:55:17Z
• Authors: S. Kumar; A. Kaczmarczyk; B. D. Gerardot
• Keywords: Strain (injury)

Two-dimensional transition metal dichalcogenide semiconductors are intriguing hosts for quantum light sources due to their unique optoelectronic properties. Here, we report that strain gradients, either unintentionally induced or generated by substrate patterning, result in spatially and spectrally isolated emitters mono- bilayer WSe2. By correlating localized excitons with variations, show the emitter emission energy can be red-tuned up a remarkable ∼170 meV. We probe fine-structure, magneto-optics, second-order coherence of strained emitter. These results raise prospect strain-engineering properties deterministically creating arrays two-dimensional semiconductors.