Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters

• DOI: 10.1021/acs.nanolett.5b04190
• Publication Date: 2016-01-09T04:34:15Z
• Authors: Chao Zhao; Tien Khee Ng; Nini Wei; Aditya Prabaswara; Mohd S. Alias; Bilal Janjua; Chao Shen; Boon S. Ooi
• Keywords: 02 engineering and technology; 0210 nano-technology

High-quality nitride materials grown on scalable and low-cost metallic substrates are considerably attractive for high-power light-emitters. We demonstrate here, the first time, red (705 nm) InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) self-assembled directly metal-substrates. The LEDs exhibited a low turn-on voltage of ∼2 V without efficiency droop up to injection current 500 mA (1.6 kA/cm(2)) at ∼5 V. This is achieved through direct growth optimization high-quality nanowires titanium (Ti) coated bulk polycrystalline-molybdenum (Mo) substrates. performed extensive studies mechanisms, obtained high-crystal-quality nanowires, confirmed epitaxial relationship between cubic (TiN) transition layer hexagonal nanowires. all-metal stack TiN/Ti/Mo enables simultaneous implementation n-metal contact, reflector, heat sink, which greatly simplifies fabrication process Our work ushers in practical platform light-emitters, providing versatile solutions multiple cross-disciplinary applications that enhanced by leveraging chemical stability materials, large specific surface lift-off ready structures, reusable Mo