MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

• DOI: 10.1021/acs.nanolett.6b03999
• Publication Date: 2016-11-07T22:52:24Z
• Authors: Amirhasan Nourbakhsh; Ahmad Zubair; Redwan N. Sajjad; Amir Tavakkoli K. G.; Wei Chen; Shiang Fang; Xi Ling; Jing Kong; Mildred S. Dresse...; Efthimios Kaxiras; Karl K. Berggren; Dimitri Antoniadis; Tomás Palacios
• Keywords: Molybdenum disulfide; Contact resistance

Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS2 minimize direct source–drain tunneling, while its atomically body maximizes the gate modulation efficiency in ultrashort-channel transistors. However, no experimental study to date has approached scale due multiple challenges related nanofabrication at this length contact resistance traditionally observed Here, using semiconducting-to-metallic phase transition MoS2, we demonstrate channel-length transistor fabrication by directed self-assembly patterning mono- trilayer MoS2. This done a 7.5 half-pitch periodic chain where semiconducting (2H) regions are seamlessly connected metallic-phase (1T′) access regions. resulting FET low off-current 10 pA/μm, on/off current ratio >107, subthreshold swing 120 mV/dec. results presented work, combined device transport modeling, reveal remarkable potential 2D future technology nodes.