Intercalation Doped Multilayer-Graphene-Nanoribbons for Next-Generation Interconnects

• DOI: 10.1021/acs.nanolett.6b04516
• Publication Date: 2016-12-24T23:11:47Z
• Authors: Junkai Jiang; Jiahao Kang; Wei Cao; Xuejun Xie; Haojun Zhang; Jae Hwan Chu; Wei Liu; Kaustav Banerjee
• Keywords: interconnect; breakdown; contact resistance; intercalation doping; 01 natural sciences; 620; resistivity; Affordable and Clean Energy; Raman spectroscopy; 0103 physical sciences; Graphene; Nanoscience & Nanotechnology; graphene-nanoribbon

Copper-based interconnects employed in a wide range of integrated circuit (IC) products are fast approaching dead-end due to their increasing resistivity and diminishing current carrying capacity with scaling, which severely degrades both performance reliability. Here we demonstrate chemical vapor deposition-synthesized intercalation-doped multilayer-graphene-nanoribbons (ML-GNRs) better (more than 20% improvement estimated delay per unit length), 25%/72% energy efficiency at local/global level, superior reliability w.r.t. Cu for the first time, dimensions (down 20 nm width thickness 12 nm) suitable IC interconnects. This is achieved through combination GNR interconnect design optimization, high-quality ML-GNR synthesis precisely controlled number layers, effective FeCl3 intercalation doping. We also that our doping stable room temperature doped ML-GNRs exhibit unique width-dependent effect increasingly efficient diffusion scaled ML-GNRs, thereby indicating will outperform even sub-20 widths. Finally, assessment conducted under accelerated stress conditions (temperature density) established highly intercalated can carry over 2 × 108 A/cm2 densities, whereas suffer from immediate breakdown same addresses key criterion necessary an alternative material. Our comprehensive demonstration reliable paves way graphene as next-generation material variety semiconductor technologies applications.