Phase-Controlled Growth of One-Dimensional Mo6Te6 Nanowires and Two-Dimensional MoTe2 Ultrathin Films Heterostructures

• DOI: 10.1021/acs.nanolett.7b03058
• Publication Date: 2017-12-20T23:11:46Z
• Authors: Yayun Yu; Guang Wang; Yuan Tan; Nannan Wu; Xue-Ao Zhang; Shiqiao Qin
• Keywords: Band bending

Controllable synthesizing of one-dimensional-two-dimensional (1D-2D) heterostructures and tuning their atomic electronic structures is nowadays particular interest due to the extraordinary properties potential applications. Here, we demonstrate temperature-induced phase-controlled growth 1D Mo6Te6-2D MoTe2 via molecular beam epitaxy. In situ scanning tunneling microscopy study shows 2D ultrathin films are synthesized at low temperature range, while nanowires gradually arise dominate as increasing. X-ray photoelectron spectroscopy confirms good stoichiometry reveals semimetallic property grown Mo6Te6 nanowires. Through in annealing, a phase transition from induced, thus forming semimetal-semiconductor junction level. An upward band bending 2H-MoTe2 caused by lateral hole injection Mo6Te6. The work suggests new route synthesize metal chalcogenide nanowires, which could serve ultrasmall conducting building blocks enable engineering future 1D-2D heterostructure devices.