Electron-Beam Manipulation of Silicon Dopants in Graphene

• DOI: 10.1021/acs.nanolett.8b02406
• Publication Date: 2018-06-27T07:08:51Z
• Authors: Mukesh Tripathi; Andreas Mittelberger; Nicholas A. Pike; Clemens Mangler; Jannik C. Meyer; Matthieu J. Verst...; Jani Kotakoski; Toma Susi
• Keywords: SURFACE; 210006 Nanotechnology; FOS: Physical sciences; 530; 01 natural sciences; Electron microscopy; 210004 Nanomaterials; TEMPERATURE; VDP::Matematikk og naturvitenskap: 400; 103042 Electron microscopy; Condensed Matter - Materials Science; nanotechnology; 103042 Elektronenmikroskopie; ABINIT SOFTWARE PACKAGE; 103018 Materialphysik; 500; SINGLE ATOMS; Materials Science (cond-mat.mtrl-sci); MICROSCOPY; 2D materials; 0104 chemical sciences; 210006 Nanotechnologie; atom manipulation; 103018 Materials physics; 210004 Nanomaterialien

The direct manipulation of individual atoms in materials using scanning probe microscopy has been a seminal achievement nanotechnology. Recent advances imaging resolution and sample stability have made transmission electron promising alternative for single-atom covalently bound materials. Pioneering experiments an atomically focused beam demonstrated the directed movement silicon over handful sites within graphene lattice. Here, we achieve much greater degree control, allowing us to precisely move impurities along extended path, circulating single hexagon, or back forth between two sublattices. Even with manual operation, our rate is already comparable state-of-the-art any precise technique. We further explore influence energy on rate, supported by improved theoretical modeling taking into account vibrations near impurities, implement feedback detect events real time. In addition atomic-level engineering its structure properties, also provides excellent platform refining accuracy quantitative models development automated manipulation.