Room-Temperature Spin Hall Effect in Graphene/MoS2 van der Waals Heterostructures

• DOI: 10.1021/acs.nanolett.8b04368
• Publication Date: 2019-01-04T20:34:18Z
• Authors: C. K. Safeer; Josep Ingla-Aynés; Franz Herling; José H. Garcia; Marc Vila; Nerea Ontoso; M. Reyes Calvo; Stephan Roche; Luis E. Hueso; Fèlix Casanova
• Keywords: Spin pumping; Rashba effect

Graphene is an excellent material for long-distance spin transport but allows little manipulation. Transition-metal dichalcogenides imprint their strong spin–orbit coupling into graphene via the proximity effect, and it has been predicted that efficient spin-to-charge conversion due to Hall Rashba–Edelstein effects could be achieved. Here, by combining probes with ferromagnetic electrodes, we unambiguously demonstrate experimentally effect in induced MoS2 varying temperatures up room temperature. The fact occur different parts of same gives rise a hitherto unreported efficiency voltage output. Additionally, single graphene/MoS2 heterostructure-based device, evidence superimposed current can indistinguishably associated either proximity-induced or MoS2. By comparison our results theoretical calculations, latter scenario found most plausible one. Our findings pave way toward combination information two-dimensional materials, opening exciting opportunities variety future spintronic applications.