Laser Writing of Scalable Single Color Centers in Silicon Carbide

• DOI: 10.1021/acs.nanolett.8b05070
• Publication Date: 2019-03-18T16:22:59Z
• Authors: Yu-Chen Chen; Patrick S. Salter; Matthias Niethammer; Matthias Widmann; Florian Kaiser; Roland Nagy; Naoya Morioka; Charles Babin; Jürgen Erlekampf; Patrick Berwian; Martin J. Booth; Jörg Wrachtrup
• Keywords: Quantum Physics; Condensed Matter - Mesoscale and Nanoscale Physics; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); FOS: Physical sciences; Physics - Applied Physics; Applied Physics (physics.app-ph); 02 engineering and technology; Quantum Physics (quant-ph); 0210 nano-technology

Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems (Awschalom et al. Nat. Photonics 2018, 12, 516−527; Atatüre Rev. Mater. 3, 38–51). However, to achieve scalable devices, it is essential generate single at desired locations on demand. Here we report the controlled creation of vacancy (VSi) centers 4H-SiC using laser writing without any postannealing process. Due aberration correction apparatus and nonannealing process, VSi with yields up 30%, located within about 80 nm position transverse plane. We also investigated photophysics concluded that there 16 photons involved center Our results represent a powerful tool fabrication SiC for technologies provide further insights into defects dielectric materials.