Probing and Manipulating Carrier Interlayer Diffusion in van der Waals Multilayer by Constructing Type-I Heterostructure

• DOI: 10.1021/acs.nanolett.9b02824
• Publication Date: 2019-09-23T15:38:44Z
• Authors: Weihao Zheng; Biyuan Zheng; Ying Jiang; Changlin Yan; Shula Chen; Ying Liu; Xinxia Sun; Chenguang Zhu; Zhaoyang Qi; Tiefeng Yang; Wei Huang; Peng Fan; Feng Jiang; Xiaoxia Wang; Xiujuan Zhuang; Dong Li; Ziwei Li; Wei Xie; Wei Ji; Xiao Wang; Anlian Pan
• Keywords: Electron Mobility

van der Waals multilayer heterostructures have drawn increasing attention due to the potential for achieving high-performance photonic and optoelectronic devices. However, carrier interlayer transportation behavior in structures, which is essential determining device performance, remains unrevealed. Here, we report a general strategy studying manipulating multilayers by constructing type-I heterostructures, with desired narrower bandgap monolayer acting as extraction layer. For comprised of PbI2 WS2, find similar diffusion coefficients ∼0.039 ∼0.032 cm2 s–1 electrons holes fitting time-resolved dynamics based on model. Because balanced injection process at heterointerface, photoluminescence emission bottom WS2 greatly enhanced up 106-fold an optimized thickness heterostructure. Our results provide valuable information structures pave way utilizing behaviors improve performances.