Large Current Driven Domain Wall Mobility and Gate Tuning of Coercivity in Ferrimagnetic Mn4N Thin Films

• DOI: 10.1021/acs.nanolett.9b03416
• Publication Date: 2019-10-30T18:06:04Z
• Authors: Toshiki Gushi; Matic Jovičević Klug; Jose Peña Garcia; Sambit Ghosh; Jean-Philippe Attané; Hanako Okuno; Olivier Fruchart; Jan Vogel; Takashi Suemasu; Stefania Pizzini; Laurent Vila
• Keywords: Ferrimagnetism; Domain wall (magnetism)

Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals rare-earths. Here, we show that Mn4N, rare-earth free ferrimagnet made abundant elements, an exciting candidate development sustainable spintronics devices. Mn4N thin films grown epitaxially SrTiO3 substrates possess remarkable properties, perpendicular magnetization, very high extraordinary Hall angle (2%) smooth domain walls at millimeter scale. Moreover, can be moved record speeds by spin-polarized currents, in absence spin-orbit torques. This explained large efficiency adiabatic spin transfer torque, due conjunction reduced magnetization polarization. Finally, application gate voltages through allows modulating coercive field with efficiency.